package 11/18/03 page 1 of 9 ?2003 fairchild semiconductor corporation 4-pin ph ototransistor optocouplers h11aa814 series h11a617 series h11a817 series h11aa814 schematic h11a617 & h11a817 schematic description the h11aa814 series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. the h11a617 and h11a817 series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. features compact 4-pin package current transfer ratio in selected groups: h11aa814: 20-300% h11a817: 50-600% h11aa814a: 50-150% h11a817a: 80-160% h11a617a: 40%-80% h11a817b: 130-260% h11a617b: 63%-125% h11a817c: 200-400% h11a617c: 100%-200% h11a817d: 300-600% h11a617d: 160%-320% minimum bv ceo of 70v guaranteed applications h11aa814 series ac line monitor unknown polarity dc sensor telephone line interface h11a617 and h11a817 series power supply regulators digital logic inputs microprocessor inputs 4 1 1 2 4 3 emitter collector 1 2 4 3 emitter collector anode cathode
11/18/03 page 2 of 9 ? 2003 fairchild semiconductor corporation 4-pin ph ototransistor optocouplers h11aa814 series h11a617 series h11a817 series *typical values at t a = 25 c. parameter symbol device value units total device storage temperature t stg all -55 to +150 c operating temperature t opr all -55 to +100 c lead solder temperature t sol all 260 for 10 sec c total device power dissipation (-55 c to 50 c) p d all 200 mw emitter continuous forward current i f all 50 ma reverse voltage v r h11a617a/b/c/d h11a817/a/b/c/d 6 5 v forward current - peak (1 s pulse, 300 pps) i f (pk) all 1.0 a led power dissipation (25 c ambient) derate above 25 c p d all 100 mw 1.33 mw/ c detector collector-emitter voltage v ceo all 70 v emitter-collector voltage v eco h11aa814/a h11a617a/b/c/d h11a817/a/b/c/d 6 7 6 v continuous collector current i c all 50 ma detector power dissipation (25 c ambient) derate above 25 c p d all 150 mw 2.0 mw/ c electrical characteristics (t a = 25 c unless otherwise speci ed.) individual component characteristics parameter test conditions symbol device min typ* max unit emitter (i f = 60 ma) v f h11a617a/b/c/d 1.35 1.65 v input forward voltage (i f = 20 ma) h11a817/a/b/c/d 1.2 1.5 (i f = 20 ma) h11aa814/a 1.2 1.5 reverse leakage current (v r = 6.0 v) i r h11a617a/b/c/d .001 10 a (v r = 5.0 v) h11a817/a/b/c/d detector collector-emitter breakdown voltage (i c = 1.0 ma, i f = 0) bv ceo all 70 100 v emitter-collector breakdown voltage (i e = 100 a, i f = 0) bv eco h11aa814/a 6 10 v h11a617a/b/c/d 7 h11a817/a/b/c/d 6 collector-emitter dark current (v ce = 10v, i f = 0) i ceo h11aa814/a, h11a817/a/b/c/d, h11a617c/d 1 100 na h11a617a/b 50 collector-emitter capacitance (v ce = 0 v, f = 1 mhz) c ce all 8 pf
11/18/03 page 3 of 9 ? 2003 fairchild semiconductor corporation 4-pin ph ototransistor optocouplers h11aa814 series h11a617 series h11a817 series *typical values at t a = 25 c. notes 1. current transfer ratio (ctr) = i c /i f x 100%. 2. for test circuit setup and waveforms, refer to figure 8. 3. for this test, pins 1 and 2 are common, and pins 3 and 4 are common. transfer characteristics (t a = 25 c unless otherwise speci ed.) dc characteristic test conditions symbol device min typ* max unit current transfer ratio (i f = 1 ma, v ce = 5 v) (note 1) ctr h11aa814 20 300 % (i f = 1 ma, v ce = 5 v) (note 1) h11aa814a 50 150 % (i f = 10 ma, v ce = 5 v) (note 1) h11a617a 40 80 % h11a617b 63 125 % h11a617c 100 200 % h11a617d 160 320 % (i f = 5 ma, v ce = 5 v) (note 1) h11a817 50 600 % h11a817a 80 160 % h11a817b 130 260 % h11a817c 200 400 % h11a817d 300 600 % (i f = 1 ma, v ce = 5 v) (note 1) h11a617a 13 % h11a617b 22 % h11a617c 34 % h11a617d 56 % collector-emitter saturation voltage (i c = 1 ma, i f = 20 ma) (i c = 2.5 ma, i f = 10 ma) (i c = 1 ma, i f = 20 ma) v ce (sat) h11aa814/a 0.2 v h11a617a/b/c/d 0.4 h11a817/a/b/c/d 0.2 ac characteristic rise time (i c = 2 ma, v ce = 2 v, r l = 100 ? ) (note 2) t r all 2.4 18 s fall time (i c = 2 ma, v ce = 2 v, r l = 100 ? ) (note 2) t f all 2.4 18 s isolation characteristics characteristic test conditions symbol min typ* max units input-output isolation voltage (note 3) f = 60hz, t = 1 min v iso 5300 vac(rms) isolation resistance (v i-o = 500 vdc) r iso 10 11 ? isolation capacitance (v i-o = 0, f = 1 mhz) c iso 0.5 pf
11/18/03 page 4 of 9 ? 2003 fairchild semiconductor corporation 4-pin ph ototransistor optocouplers h11aa814 series h11a617 series h11a817 series 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 5 -50 -25 0 0 0.1 0.2 0.5 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.0 2.0 5 10 20 50 100 .02 .04 .06 .08 .1 .12 .14 25 50 75 100 125 10 15 20 25 i f - forward current (ma) ctr normalized @ i f = 5 ma, v ce = 5 v, t a = 25 ? c v ce (sat) - collector-emitter saturation voltage (v) v f - forward voltage (v) normalized ctr ctr normalized @ i f = 5 ma, v ce = 5 v, t a = 25 ? c normalized ctr 30 -50 0.4 0.6 0.8 1 1.2 -25 0 +25 +50 +75 t a - ambient temperature ( ? c) t a - ambient temperature ( ? c) i f - forward current (ma) +100 fig. 1 normalized ctr vs. forward current fig. 3 collector-emitter saturation voltage vs. ambient temperature fig. 2 normalized ctr vs. ambient temperature fig. 4 forward voltage vs. forward current i f = 20 ma i c = 1 ma i f = 10 ma i f = 5 ma t = -55 ? c t = 25 ? c t = 100 ? c 0 0 5 10 15 20 25 12345678910 v ce - collector-emitter voltage (v) fig. 5 collector current vs. collector-emitter voltage i f = 5 ma i f = 1 ma i f = 10 ma i f = 20 ma i c - collector current (ma)
11/18/03 page 5 of 9 ? 2003 fairchild semiconductor corporation 4-pin ph ototransistor optocouplers h11aa814 series h11a617 series h11a817 series 0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 25 50 75 100 125 i ceo - collector-emitter current ( a) t a - ambient temperature ( ? c) fig. 6 collector leakage current vs. ambient temperature v ce = 10 v 0.1 0.1 1 10 100 1000 1 10 100 r - load resistor (kv) fig. 7 rise and fall time vs. load resistor t off t on t f t r/ t f- rise and fall time ( s) t r i f = 5 ma v cc = 5 v t a = 25 ? c output pulse input pulse test circuit wave forms t r t f input i f r l = 100 ? v cc = 10v output temperature ( c) 250 200 150 100 50 0 01 2345 time (min) 220 c: 10 sec to 40 sec time > 183 c: 120 sec to 180 sec 225 c 10% 90% figure 8. switching time test circuit and waveforms recommended thermal reflow profile for surface mount dip package i c adjust i f to produce i c = 2 ma
11/18/03 page 6 of 9 ? 2003 fairchild semiconductor corporation 4-pin ph ototransistor optocouplers h11aa814 series h11a617 series h11a817 series note all dimensions are in inches (millimeters) package dimensions (through hole) package dimensions (surface mount) footprint dimensions (surface mount) seating plane 0.190 (4.83) 0.175 (4.45) 0.200 (5.08) 0.115 (2.92) 0.100 (2.54) typ 0.154 (3.90) 0.120 (3.05) 0.270 (6.86) 0.250 (6.35) 0.270 (6.86) 0.250 (6.35) 0.020 (0.51) min 0.300 (7.62) typ 15 0.016 (0.40) 0.008 (0.20) se a t in g p l a n e 0.190 (4.83) 0.175 (4.45) 0.200 (5.08) 0.115 (2.92) 0.020 (0.51) min 0.070 (1.78) 0.045 (1.14) 0.100 (2.54) typ 0.022 (0.56) 0.016 (0.41) 0.405 (10.30) max 0.315 (8.00) min 0.300 (7.62) typ 0.016 (0.40) 0.008 (0.20) 0.270 (6.86) 0.250 (6.35) lead coplanarity 0.004 (0.10) max 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.295 (7.49) 0.415 (10.54) 0.100 (2.54) seating p lan e 0.400 (10.16) typ 0 to 15 0.270 (6.86) 0.250 (6.35) 0.190 (4.83) 0.175 (4.45) 0.100 (2.54) typ 0.154 (3.90) 0.120 (3.05) 0.004 (0.10) min 0.200 (5.08) 0.115 (2.92) 0.270 (6.86) 0.250 (6.35) 0.016 (0.40) 0.008 (0.20) package dimensions (0.4 lead spacing)
11/18/03 page 7 of 9 ? 2003 fairchild semiconductor corporation 4-pin ph ototransistor optocouplers h11aa814 series h11a617 series h11a817 series ordering information marking information option order entry identi?r description s .s surface mount lead bend sd .sd surface mount; tape and reel w .w 0.4" lead spacing 300 .300 vde 0884 300w .300w vde 0884, 0.4" lead spacing 3s .3s vde 0884, surface mount 3sd .3sd vde 0884, surface mount, tape & reel 1 2 6 4 3 5 de?itions 1 fairchild logo 2 device number 3 vde mark (note: only appears on parts ordered with vde option see order entry table) 4 one digit year code 5 two digit work week ranging from 01 to 53 6 assembly package code 814 x vt yy
11/18/03 page 8 of 9 ? 2003 fairchild semiconductor corporation 4-pin ph ototransistor optocouplers h11aa814 series h11a617 series h11a817 series note all dimensions are in millimeters carrier tape specifications 4.0 0.1 1.55 0.05 user direction of feed 4.0 0.1 1.75 0.10 7.5 0.1 16.0 0.3 12.0 0.1 0.30 0.05 13.2 0.2 5.00 0.20 0.1 max 10.30 0.20 1.6 0.1 4.95 0.20
life support policy fairchild s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. 11/18/03 page 9 of 9 ? 2003 fairchild semiconductor corporation 4-pin ph ototransistor optocouplers h11aa814 series h11a617 series h11a817 series
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